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Ackley Professor of Engineering Science, Engineering Science and Mechanics
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Recent Publications
Comparison of the MOCVD growth and properties of wafer-scale transition metal dichalcogenide epitaxial monolayers
Choudhury, T. H., Trainor, N., Chen, C., Chubarov, M., Bachu, S., Momeni, K., Lundh, J. S., Hickey, D. R., Zhang, T., Sebastian, A., Zhu, H., Song, B., Chen, Y., Huet, B., Bansal, A., Choi, S., Alem, N., Terrones, M., Jariwala, D. & Das, S. & 1 others, , Oct 1 2025, In: 2D Materials. 12, 4, 045009.Research output: Contribution to journal › Article › peer-review
3D Integration of functionally diverse 2D materials for optoelectronic reservoir computing
Chowdhury, A., Rasyotra, A., Ravichandran, H., Manoharan, D. K., Sun, Y., Chen, C., Redwing, J. M., Yang, Y. & Das, S., Dec 2025, In: Nature communications. 16, 1, 10252.Research output: Contribution to journal › Article › peer-review
High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials
Das, M., Sen, D., Sakib, N. U., Ravichandran, H., Sun, Y., Zhang, Z., Ghosh, S., Venkatram, P., Subbulakshmi Radhakrishnan, S., Sredenschek, A., Yu, Z., Sarkar, K. J., Sadaf, M. U. K., Meganathan, K., Pannone, A., Han, Y., Sanchez, D. E., Somvanshi, D., Sofer, Z. & Terrones, M. & 2 others, , Jan 2025, In: Nature Electronics. 8, 1, p. 24-35 12 p., 693.Research output: Contribution to journal › Article › peer-review
Publisher Correction: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials (Nature Electronics, (2024), 8, 1, (24-35), 10.1038/s41928-024-01265-2)
Das, M., Sen, D., Sakib, N. U., Ravichandran, H., Sun, Y., Zhang, Z., Ghosh, S., Venkatram, P., Subbulakshmi Radhakrishnan, S., Sredenschek, A., Yu, Z., Sarkar, K. J., Sadaf, M. U. K., Meganathan, K., Pannone, A., Han, Y., Sanchez, D. E., Somvanshi, D., Sofer, Z. & Terrones, M. & 2 others, , Jan 2025, In: Nature Electronics. 8, 1, p. 93 1 p.Research output: Contribution to journal › Comment/debate › peer-review
Welcome Message from the Chair
Das, S., 2025, In: Device Research Conference - Conference Digest, DRC.Research output: Contribution to journal › Editorial › peer-review
A complementary two-dimensional material-based one instruction set computer
Ghosh, S., Zheng, Y., Rafiq, M., Ravichandran, H., Sun, Y., Chen, C., Goswami, M., Sakib, N. U., Sadaf, M. U. K., Pannone, A., Ray, S., Redwing, J. M., Yang, Y., Sahay, S. & Das, S., Jun 12 2025, In: Nature. 642, 8067, p. 327-335 9 p.Research output: Contribution to journal › Article › peer-review
High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping
Ghosh, S., Sadaf, M. U. K., Graves, A. R., Zheng, Y., Pannone, A., Ray, S., Cheng, C. Y., Guevara, J., Redwing, J. M. & Das, S., Dec 2025, In: Nature communications. 16, 1, 5649.Research output: Contribution to journal › Article › peer-review
Exploring the Application of Gold-Assisted Exfoliation in Large-scale Integration of n-Type and p-Type 2D-FETs
Giza, M., Mukhopadhyay, K., Ravichandran, H., Pannone, A., Ghosh, S. & Das, S., 2025, (Accepted/In press) In: Small Methods.Research output: Contribution to journal › Article › peer-review
Editorial for the JEDS Special Issue for EDTM 2024
Mohapatra, N. R., Tiwari, S. P., Sahay, S., Nair, D., Das, S., Karve, G., Raghavan, N., Sebastian, A. & Sanuki, T., 2025, In: IEEE Journal of the Electron Devices Society. 13, p. 659-660 2 p.Research output: Contribution to journal › Editorial › peer-review
Nanosheets Derived from Titanium Diboride as Gate Insulators for Atomically Thin Transistors
Rasyotra, A., Das, M., Sen, D., Zhang, Z., Pannone, A., Chen, C., Redwing, J. M., Yang, Y., Jasuja, K. & Das, S., Jun 3 2025, In: ACS nano. 19, 21, p. 19646-19658 13 p.Research output: Contribution to journal › Article › peer-review
Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors
Sadaf, M. U. K., Chen, Z., Subbulakshmi Radhakrishnan, S., Sun, Y., Ding, L., Graves, A. R., Yang, Y., Redwing, J. M. & Das, S., Dec 2025, In: Nature communications. 16, 1, 4879.Research output: Contribution to journal › Article › peer-review
High-performance molybdenum disulfide transistors with channel and contact lengths below 35 nm
Sakib, N. U., Chen, C., Ding, L., Yang, Y., Redwing, J. M. & Das, S., Dec 2025, In: Nature Electronics. 8, 12, p. 1201-1210 10 p.Research output: Contribution to journal › Article › peer-review
Large-scale crossbar arrays based on three-terminal MoS2 memtransistors
Schranghamer, T. F., Pannone, A., Kumar, J. M., Thiyyadi Baiju, D. K., Chen, C., McKnight, T., Tadekawa, S., Haines, E., Ordonez, R., Hayashi, C., Redwing, J. M. & Das, S., Dec 2025, In: Nature communications. 16, 1, 9518.Research output: Contribution to journal › Article › peer-review
Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor deposition
Chen, C., Trainor, N., Kumari, S., Myja, H., Kümmell, T., Zhang, Z., Zhang, Y., Bisht, A., Sadaf, M. U. K., Sakib, N. U., Han, Y., Mc Knight, T. V., Graves, A. R., Leger, M. E., Redwing, N. D., Kim, M., Kowalczyk, D. A., Bacher, G., Alem, N. & Yang, Y. & 2 others, , Mar 1 2024, In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 42, 2, 022201.Research output: Contribution to journal › Article › peer-review
Topological devices take a step forward
Das, S., Apr 19 2024, In: Device. 2, 4, 100359.Research output: Contribution to journal › Comment/debate › peer-review