Rongming Chu

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IEE Research Themes
Affiliate Researcher
Titles and Affiliations
Associate Professor, Electrical Engineering

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Recent Publications

Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes

Kemmerling, J. T., Guan, R., Sadek, M., Isukapati, S., Sung, W., Han, S. W. & Chu, R., May 1 2022, In: IEEE Electron Device Letters. 43, 5, p. 701-704 4 p.

Research output: Contribution to journalArticlepeer-review

High-Temperature Static and Dynamic Characteristics of 4.2-kV GaN Super-Heterojunction p-n Diodes

Sadek, M., Han, S. W., Song, J., Gallagher, J. C., Anderson, T. J. & Chu, R., Apr 1 2022, In: IEEE Transactions on Electron Devices. 69, 4, p. 1912-1917 6 p.

Research output: Contribution to journalArticlepeer-review

Investigation of phase evolution within ZnO–Bi2O3 varistors utilizing thin film prototypes

Ferri, K., Paisley, E. A., DiAntonio, C., Han, S. W., Chu, R. & Maria, J. P., Aug 2021, In: Journal of Materials Science. 56, 22, p. 12740-12752 13 p.

Research output: Contribution to journalArticlepeer-review

12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

Han, S. W., Song, J., Sadek, M., Molina, A., Ebrish, M. A., Mohney, S. E., Anderson, T. J. & Chu, R., Nov 1 2021, In: IEEE Transactions on Electron Devices. 68, 11, p. 5736-5741 6 p.

Research output: Contribution to journalArticlepeer-review

Study of interface trap density of AlOxNy/GaN MOS structures

Song, J., Han, S. W., Luo, H., Rumsey, J., Leach, J. H. & Chu, R., Sep 20 2021, In: Applied Physics Letters. 119, 12, 122105.

Research output: Contribution to journalArticlepeer-review

GaN power switches on the rise: Demonstrated benefits and unrealized potentials

Chu, R., Mar 2 2020, In: Applied Physics Letters. 116, 9, 090502.

Research output: Contribution to journalReview articlepeer-review

Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode

Han, S. W., Song, J. & Chu, R., Jan 2020, In: IEEE Transactions on Electron Devices. 67, 1, p. 69-74 6 p., 8932621.

Research output: Contribution to journalArticlepeer-review

Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Han, S. W., Song, J., Yoo, S. H., Ma, Z., Lavelle, R. M., Snyder, D. W., Redwing, J. M., Jackson, T. N. & Chu, R., Dec 2020, In: IEEE Electron Device Letters. 41, 12, p. 1758-1761 4 p., 9217445.

Research output: Contribution to journalArticlepeer-review

Effect of Substrate Choice on Transient Performance of Lateral GaN FETs

Hontz, M. R., Chu, R. & Khanna, R., 2020, In: IEEE Journal of the Electron Devices Society. 8, p. 331-335 5 p., 9040524.

Research output: Contribution to journalArticlepeer-review

Exploring benefits of composition grading for forward-IV characteristics of In1-xGaxAs LEDs for cryogenic applications

Wisch, J. & Chu, R., Nov 7 2020, In: Journal of Applied Physics. 128, 17, 175701.

Research output: Contribution to journalArticlepeer-review

High-Q GaN Varactors for mm-Wave Applications: A Physics-Based Simulation Study

Song, J., Han, S. W. & Chu, R., Oct 2019, In: IEEE Transactions on Electron Devices. 66, 10, p. 4134-4139 6 p., 8811826.

Research output: Contribution to journalArticlepeer-review

The 2018 GaN power electronics roadmap

Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., Charles, M., Chen, K. J., Chowdhury, N., Chu, R., De Santi, C., De Souza, M. M., Decoutere, S., Di Cioccio, L., Eckardt, B., Egawa, T., Fay, P., Freedsman, J. J., Guido, L., Häberlen, O., & 45 othersHaynes, G., Heckel, T., Hemakumara, D., Houston, P., Hu, J., Hua, M., Huang, Q., Huang, A., Jiang, S., Kawai, H., Kinzer, D., Kuball, M., Kumar, A., Lee, K. B., Li, X., Marcon, D., März, M., McCarthy, R., Meneghesso, G., Meneghini, M., Morvan, E., Nakajima, A., Narayanan, E. M. S., Oliver, S., Palacios, T., Piedra, D., Plissonnier, M., Reddy, R., Sun, M., Thayne, I., Torres, A., Trivellin, N., Unni, V., Uren, M. J., Van Hove, M., Wallis, D. J., Wang, J., Xie, J., Yagi, S., Yang, S., Youtsey, C., Yu, R., Zanoni, E., Zeltner, S. & Zhang, Y., Mar 26 2018, In: Journal of Physics D: Applied Physics. 51, 16, 163001.

Research output: Contribution to journalReview articlepeer-review

Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition

Cao, Y., Li, R., Williams, A. J., Chu, R., Corrion, A. L. & Chang, R., May 15 2017, In: Journal of Materials Research. 32, 9, p. 1611-1617 7 p.

Research output: Contribution to journalArticlepeer-review

Modeling and Characterization of Vertical GaN Schottky Diodes with AlGaN Cap Layers

Hontz, M. R., Cao, Y., Chen, M., Li, R., Garrido, A., Chu, R. & Khanna, R., May 2017, In: IEEE Transactions on Electron Devices. 64, 5, p. 2172-2178 7 p., 7891887.

Research output: Contribution to journalArticlepeer-review

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Cao, Y., Chu, R., Li, R., Chen, M., Chang, R. & Hughes, B., Feb 8 2016, In: Applied Physics Letters. 108, 6, 062103.

Research output: Contribution to journalArticlepeer-review