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Recent Publications
GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching
Kemmerling, J. T., Guan, R., Sadek, M., Xiong, Y., Song, J., Han, S. W., Isukapati, S., Sung, W. & Chu, R., Feb 1 2024, In: IEEE Transactions on Electron Devices. 71, 2, p. 1153-1159 7 p.Research output: Contribution to journal › Article › peer-review
Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes
Kemmerling, J. T., Guan, R., Sadek, M., Isukapati, S., Sung, W., Han, S. W. & Chu, R., May 1 2022, In: IEEE Electron Device Letters. 43, 5, p. 701-704 4 p.Research output: Contribution to journal › Article › peer-review
High-Temperature Static and Dynamic Characteristics of 4.2-kV GaN Super-Heterojunction p-n Diodes
Sadek, M., Han, S. W., Song, J., Gallagher, J. C., Anderson, T. J. & Chu, R., Apr 1 2022, In: IEEE Transactions on Electron Devices. 69, 4, p. 1912-1917 6 p.Research output: Contribution to journal › Article › peer-review
Investigation of phase evolution within ZnO–Bi2O3 varistors utilizing thin film prototypes
Ferri, K., Paisley, E. A., DiAntonio, C., Han, S. W., Chu, R. & Maria, J. P., Aug 2021, In: Journal of Materials Science. 56, 22, p. 12740-12752 13 p.Research output: Contribution to journal › Article › peer-review
12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes
Han, S. W., Song, J., Sadek, M., Molina, A., Ebrish, M. A., Mohney, S. E., Anderson, T. J. & Chu, R., Nov 1 2021, In: IEEE Transactions on Electron Devices. 68, 11, p. 5736-5741 6 p.Research output: Contribution to journal › Article › peer-review
Study of interface trap density of AlOxNy/GaN MOS structures
Song, J., Han, S. W., Luo, H., Rumsey, J., Leach, J. H. & Chu, R., Sep 20 2021, In: Applied Physics Letters. 119, 12, 122105.Research output: Contribution to journal › Article › peer-review
GaN power switches on the rise: Demonstrated benefits and unrealized potentials
Chu, R., Mar 2 2020, In: Applied Physics Letters. 116, 9, 090502.Research output: Contribution to journal › Review article › peer-review
Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode
Han, S. W., Song, J. & Chu, R., Jan 2020, In: IEEE Transactions on Electron Devices. 67, 1, p. 69-74 6 p., 8932621.Research output: Contribution to journal › Article › peer-review
Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
Han, S. W., Song, J., Yoo, S. H., Ma, Z., Lavelle, R. M., Snyder, D. W., Redwing, J. M., Jackson, T. N. & Chu, R., Dec 2020, In: IEEE Electron Device Letters. 41, 12, p. 1758-1761 4 p., 9217445.Research output: Contribution to journal › Article › peer-review
Effect of Substrate Choice on Transient Performance of Lateral GaN FETs
Hontz, M. R., Chu, R. & Khanna, R., 2020, In: IEEE Journal of the Electron Devices Society. 8, p. 331-335 5 p., 9040524.Research output: Contribution to journal › Article › peer-review
Exploring benefits of composition grading for forward-IV characteristics of In1-xGaxAs LEDs for cryogenic applications
Wisch, J. & Chu, R., Nov 7 2020, In: Journal of Applied Physics. 128, 17, 175701.Research output: Contribution to journal › Article › peer-review
High-Q GaN Varactors for mm-Wave Applications: A Physics-Based Simulation Study
Song, J., Han, S. W. & Chu, R., Oct 2019, In: IEEE Transactions on Electron Devices. 66, 10, p. 4134-4139 6 p., 8811826.Research output: Contribution to journal › Article › peer-review
The 2018 GaN power electronics roadmap
Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., Charles, M., Chen, K. J., Chowdhury, N., Chu, R., De Santi, C., De Souza, M. M., Decoutere, S., Di Cioccio, L., Eckardt, B., Egawa, T., Fay, P., Freedsman, J. J., Guido, L., Häberlen, O., & 45 others, Mar 26 2018, In: Journal of Physics D: Applied Physics. 51, 16, 163001.Research output: Contribution to journal › Review article › peer-review
Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition
Cao, Y., Li, R., Williams, A. J., Chu, R., Corrion, A. L. & Chang, R., May 15 2017, In: Journal of Materials Research. 32, 9, p. 1611-1617 7 p.Research output: Contribution to journal › Article › peer-review
Modeling and Characterization of Vertical GaN Schottky Diodes with AlGaN Cap Layers
Hontz, M. R., Cao, Y., Chen, M., Li, R., Garrido, A., Chu, R. & Khanna, R., May 2017, In: IEEE Transactions on Electron Devices. 64, 5, p. 2172-2178 7 p., 7891887.Research output: Contribution to journal › Article › peer-review