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Recent Publications
Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing
Al-Mamun, N. S., Du, Y., Song, J., Chu, R. & Haque, A., Mar 2025, In: Micromachines. 16, 3, 242.Research output: Contribution to journal › Article › peer-review
(Ultra)wide-bandgap semiconductors for extreme environment electronics
Chu, R., Chen, K., Zetterling, C. M. & Schrimpf, R., Mar 1 2025, In: Applied Physics Letters. 126, 12, 120401.Research output: Contribution to journal › Editorial › peer-review
Examining composition-dependent radiation response in AlGaN alloys
Jin, M., Reza, F., Hauck, A., Mahfuz, M., Wang, X., Chu, R. & Tuttle, B., May 1 2025, In: Acta Materialia. 289, 120891.Research output: Contribution to journal › Article › peer-review
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time
Kemmerling, J. T., Du, Y. & Chu, R., 2025, In: IEEE Transactions on Electron Devices. 72, 2, p. 604-610 7 p.Research output: Contribution to journal › Article › peer-review
Recent advances in GaN-based power devices and integration
Xiong, Y., Sadek, M. & Chu, R., Mar 2025, In: Semiconductor Science and Technology. 40, 3, 033002.Research output: Contribution to journal › Review article › peer-review
GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching
Kemmerling, J. T., Guan, R., Sadek, M., Xiong, Y., Song, J., Han, S. W., Isukapati, S., Sung, W. & Chu, R., Feb 1 2024, In: IEEE Transactions on Electron Devices. 71, 2, p. 1153-1159 7 p.Research output: Contribution to journal › Article › peer-review
Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation
Mahfuz, M., Reza, F., Liu, X., Chu, R., Lang, M., Snure, M., Wang, X. & Jin, M., Mar 11 2024, In: Applied Physics Letters. 124, 11, 112104.Research output: Contribution to journal › Article › peer-review
Leakage Current and Breakdown Characteristics of Isolation in Gallium Nitride Lateral Power Devices
Sadek, M., Han, S. W., Chakravorty, A., Kemmerling, J. T., Guan, R., Song, J., Xiong, Y., Lundh, J., Hobart, K. D., Anderson, T. J. & Chu, R., 2024, In: IEEE Transactions on Electron Devices. 71, 11, p. 6915-6920 6 p.Research output: Contribution to journal › Article › peer-review
Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor
Song, J., Chakravorty, A., Jin, M. & Chu, R., Apr 22 2024, In: Applied Physics Letters. 124, 17, 172106.Research output: Contribution to journal › Article › peer-review
Monolithically Integrated GaN Photodetector and Bootstrapping Transimpedance Amplifier
Xiong, Y., Guan, R., Kemmerling, J. T., Du, Y., Sadek, M., Song, J., Xie, A. & Chu, R., Jul 1 2024, In: IEEE Electron Device Letters. 45, 7, p. 1161-1164 4 p.Research output: Contribution to journal › Article › peer-review
Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes
Kemmerling, J. T., Guan, R., Sadek, M., Isukapati, S., Sung, W., Han, S. W. & Chu, R., May 1 2022, In: IEEE Electron Device Letters. 43, 5, p. 701-704 4 p.Research output: Contribution to journal › Article › peer-review
High-Temperature Static and Dynamic Characteristics of 4.2-kV GaN Super-Heterojunction p-n Diodes
Sadek, M., Han, S. W., Song, J., Gallagher, J. C., Anderson, T. J. & Chu, R., Apr 1 2022, In: IEEE Transactions on Electron Devices. 69, 4, p. 1912-1917 6 p.Research output: Contribution to journal › Article › peer-review
Investigation of phase evolution within ZnO–Bi2O3 varistors utilizing thin film prototypes
Ferri, K., Paisley, E. A., DiAntonio, C., Han, S. W., Chu, R. & Maria, J. P., Aug 2021, In: Journal of Materials Science. 56, 22, p. 12740-12752 13 p.Research output: Contribution to journal › Article › peer-review
12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes
Han, S. W., Song, J., Sadek, M., Molina, A., Ebrish, M. A., Mohney, S. E., Anderson, T. J. & Chu, R., Nov 1 2021, In: IEEE Transactions on Electron Devices. 68, 11, p. 5736-5741 6 p.Research output: Contribution to journal › Article › peer-review
Study of interface trap density of AlOxNy/GaN MOS structures
Song, J., Han, S. W., Luo, H., Rumsey, J., Leach, J. H. & Chu, R., Sep 20 2021, In: Applied Physics Letters. 119, 12, 122105.Research output: Contribution to journal › Article › peer-review