Burcu Ozden

Affiliate Researcher
Titles and Affiliations
Assistant Professor of Engineering, Division of Engineering and Science (Abington)

Burcu Ozden conducts interdisciplinary research in materials science and sustainability. Her interests include studying defects in two-dimensional (2D) materials, exploring their potential in nanoelectronics, and investigating the effects of gamma and proton radiation on these materials for applications in aerospace, medical, and nuclear fields. She is also engaged in developing photoelectrochemical catalysis systems for renewable energy conversion and environmental remediation, with a focus on water splitting and pollutant degradation. Additionally, Ozden explores the properties of Martian soil simulants to support space exploration and the construction of planetary habitats. Her research on exciton-polaritons aims to advance quantum technologies. Furthermore, she is committed to sustainability education, developing innovative curricula and outreach programs to foster environmental stewardship.

In the News

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Projects

Recent Publications

The effect of gamma ray irradiation on few layered MoSe2: A material for nuclear and space applications

Ozden, B., Aditya, T., Cherry, J., Yu, Z., Allain, J. P. & Terrones, M., Feb 1 2024, In: AIP Advances. 14, 2, 025012.

Research output: Contribution to journalArticlepeer-review

Engineering Vacancies for the Creation of Antisite Defects in Chemical Vapor Deposition Grown Monolayer MoS2 and WS2 via Proton Irradiation

Ozden, B., Zhang, T., Liu, M., Fest, A., Pearson, D. A., Khan, E., Uprety, S., Razon, J. E., Cherry, J., Fujisawa, K., Liu, H., Perea-López, N., Wang, K., Isaacs-Smith, T., Park, M. & Terrones, M., Dec 26 2023, In: ACS nano. 17, 24, p. 25101-25117 17 p.

Research output: Contribution to journalArticlepeer-review

Ballistic transport of a polariton ring condensate with spin precession

Yao, Q., Sedov, E., Mukherjee, S., Beaumariage, J., Ozden, B., West, K., Pfeiffer, L., Kavokin, A. & Snoke, D. W., Dec 15 2022, In: Physical Review B. 106, 24, 245309.

Research output: Contribution to journalArticlepeer-review

High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors

Mirkhani, V., Wang, S., Yapabandara, K., Sultan, M. S., Khanal, M. P., Uprety, S., Ozden, B., Hassani, E., Schoenek, B. V., Kim, D. J., Oh, T. S., Ahyi, A. C., Dhar, S., Hamilton, M. C., Sk, M. H. & Park, M., Oct 2021, In: Semiconductor Science and Technology. 36, 10, 105011.

Research output: Contribution to journalArticlepeer-review

Dynamics of spin polarization in tilted polariton rings

Mukherjee, S., Kozin, V. K., Nalitov, A. V., Shelykh, I. A., Sun, Z., Myers, D. M., Ozden, B., Beaumariage, J., Steger, M., Pfeiffer, L. N., West, K. & Snoke, D. W., Apr 22 2021, In: Physical Review B. 103, 16, 165306.

Research output: Contribution to journalArticlepeer-review

Incorporating sustainability in material science education: Adapting computer aid programs in teaching materials sustainability

Ozden, B., Oct 2021, In: MRS Communications. 11, 5, p. 685-691 7 p.

Research output: Contribution to journalLetterpeer-review

On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO

Mirkhani, V., Yapabandara, K., Wang, S., Khanal, M. P., Uprety, S., Sultan, M. S., Ozden, B., Ahyi, A. C., Hamilton, M. C., Sk, M. H. & Park, M., Feb 28 2019, In: Thin Solid Films. 672, p. 152-156 5 p.

Research output: Contribution to journalArticlepeer-review

Observation of nonequilibrium motion and equilibration in polariton rings

Mukherjee, S., Myers, D. M., Lena, R. G., Ozden, B., Beaumariage, J., Sun, Z., Steger, M., Pfeiffer, L. N., West, K., Daley, A. J. & Snoke, D. W., Dec 23 2019, In: Physical Review B. 10, 24, 245304.

Research output: Contribution to journalArticlepeer-review

Superlinear increase of photocurrent due to stimulated scattering into a polariton condensate

Myers, D. M., Ozden, B., Steger, M., Sedov, E., Kavokin, A., West, K., Pfeiffer, L. N. & Snoke, D. W., Jul 2 2018, In: Physical Review B. 98, 4, 045301.

Research output: Contribution to journalArticlepeer-review

Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors

Khanal, M. P., Ozden, B., Kim, K., Uprety, S., Mirkhani, V., Yapabandara, K., Ahyi, A. C. & Park, M., May 1 2017, In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 35, 3, 03D107.

Research output: Contribution to journalArticlepeer-review

Edge trapping of exciton-polariton condensates in etched pillars

Myers, D. M., Wuenschell, J. K., Ozden, B., Beaumariage, J., Snoke, D. W., Pfeiffer, L. & West, K., May 22 2017, In: Applied Physics Letters. 110, 21, 211104.

Research output: Contribution to journalArticlepeer-review

Raman and X-ray photoelectron spectroscopy investigation of the effect of gamma-ray irradiation on MoS2

Ozden, B., Khanal, M. P., Park, J., Uprety, S., Mirkhani, V., Yapabandara, K., Kim, K., Kuroda, M., Bozack, M. J., Choi, W. & Park, M., Apr 1 2017, In: Micro and Nano Letters. 12, 4, p. 271-274 4 p.

Research output: Contribution to journalArticlepeer-review

Study of device instability of bottom-gate ZnO transistors with sol-gel derived channel layers

Yapabandara, K., Mirkhani, V., Sultan, M. S., Ozden, B., Khanal, M. P., Park, M., Wang, S., Hamilton, M. C., Chung, Y., Kim, D. J. & Sk, M. H., May 1 2017, In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 35, 3, 03D104.

Research output: Contribution to journalArticlepeer-review

Simulation of the refractive index of Ga doped ZnO nanoparticles embedded in PEDOT:PSS using effective medium approximations

Mirkhani, V., Tong, F., Song, D., Chung, Y., Ozden, B., Yapabandara, K., Hamilton, M., Kim, D. J., Koo, H., Lee, K. K. & Park, M., Jul 2016, In: Journal of Nanoscience and Nanotechnology. 16, 7, p. 7358-7362 5 p.

Research output: Contribution to journalArticlepeer-review

Time-resolved photocurrent spectroscopic diagnostics of electrically active defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on Si wafers

Ozden, B., Khanal, M. P., Mirkhani, V., Yapabandara, K., Yang, C., Ko, S., Youn, S., Hamilton, M. C., Sk, M. H., Ahyi, A. C. & Park, M., Jul 2016, In: Journal of Nanoscience and Nanotechnology. 16, 7, p. 7630-7634 5 p.

Research output: Contribution to journalArticlepeer-review