Joan Redwing

Affiliate Researcher
Titles and Affiliations
Professor, Materials Science and Engineering

Research Summary

Research interests include electronic materials synthesis and characterization, metalorganic vapor phase epitaxy of compound semiconductors, wide bandgap materials (Group III-Nitrides and SiC) semiconductor nanowire fabrication, and gas phase and surface

In the News

Research Keywords

Projects

Recent Publications

Quantum Confined Luminescence in Two Dimensions

Bachu, S., Habis, F., Huet, B., Woo, S. Y., Miao, L., Reifsnyder Hickey, D., Kim, G., Trainor, N., Watanabe, K., Taniguchi, T., Jariwala, D., Redwing, J. M., Wang, Y., Kociak, M., Tizei, L. H. G. & Alem, N., Jan 15 2025, In: ACS Photonics. 12, 1, p. 364-374 11 p.

Research output: Contribution to journalArticlepeer-review

Comparison of the MOCVD growth and properties of wafer-scale transition metal dichalcogenide epitaxial monolayers

Choudhury, T. H., Trainor, N., Chen, C., Chubarov, M., Bachu, S., Momeni, K., Lundh, J. S., Hickey, D. R., Zhang, T., Sebastian, A., Zhu, H., Song, B., Chen, Y., Huet, B., Bansal, A., Choi, S., Alem, N., Terrones, M., Jariwala, D. & Das, S. & 1 others, Redwing, J. M., Oct 1 2025, In: 2D Materials. 12, 4, 045009.

Research output: Contribution to journalArticlepeer-review

3D Integration of functionally diverse 2D materials for optoelectronic reservoir computing

Chowdhury, A., Rasyotra, A., Ravichandran, H., Manoharan, D. K., Sun, Y., Chen, C., Redwing, J. M., Yang, Y. & Das, S., Dec 2025, In: Nature communications. 16, 1, 10252.

Research output: Contribution to journalArticlepeer-review

A complementary two-dimensional material-based one instruction set computer

Ghosh, S., Zheng, Y., Rafiq, M., Ravichandran, H., Sun, Y., Chen, C., Goswami, M., Sakib, N. U., Sadaf, M. U. K., Pannone, A., Ray, S., Redwing, J. M., Yang, Y., Sahay, S. & Das, S., Jun 12 2025, In: Nature. 642, 8067, p. 327-335 9 p.

Research output: Contribution to journalArticlepeer-review

High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping

Ghosh, S., Sadaf, M. U. K., Graves, A. R., Zheng, Y., Pannone, A., Ray, S., Cheng, C. Y., Guevara, J., Redwing, J. M. & Das, S., Dec 2025, In: Nature communications. 16, 1, 5649.

Research output: Contribution to journalArticlepeer-review

Phonon transport in Al-rich AlxGa1−xN thin films

Kang, K., Pathak, A., Song, Y., Walwil, H., Mirabito, T., McIlwaine, N. S., Ji, M., Larkin, L. A. S., Saltonstall, C. B., Allerman, A. A., Maria, J. P., Redwing, J. M., Malen, J. A., McGaughey, A. J. H. & Choi, S., Aug 28 2025, In: Journal of Applied Physics. 138, 8, 085101.

Research output: Contribution to journalArticlepeer-review

In-plane and out-of-plane domain orientation dispersions in 1 to 3 monolayers epitaxial WS2 and MoS2 films on GaN(0001) film/sapphire(0001)

Kumari, S., Dhull, N., Lin, W., Lu, Z., Redwing, J., Lu, T. M. & Wang, G. C., Jan 2025, In: Physica E: Low-Dimensional Systems and Nanostructures. 165, 116117.

Research output: Contribution to journalArticlepeer-review

Chemical-mechanical polishing improvementsand subsurface damage elimination for Cz grown (010) β-Ga2O3 substrates

Lavelle, R. M., Everson, W. J., Erdely, D. J., Lyle, L. A. M., Pistner, S. W., Hallacher, S. R., Redwing, J. M. & Snyder, D. W., May 2025, In: Materials Science in Semiconductor Processing. 190, 109341.

Research output: Contribution to journalArticlepeer-review

Evidence for In-Plane Electrical Polarization in 3R-ß’-In2Se3 Thin Films Grown by Molecular Beam Epitaxy

Liu, D. S. H., Calderon, S., Jacques, L., Yao, J., Suceava, A. C., Fazlioglu-Yalcin, B., Li, M., Young, J., Auker, W., Law, S., Engel-Herbert, R., Gopalan, V., Liu, Y., Trolier-McKinstry, S., Dickey, E. C., Redwing, J. M. & Hilse, M., Jun 18 2025, In: ACS Applied Materials and Interfaces. 17, 24, p. 35661-35672 12 p.

Research output: Contribution to journalArticlepeer-review

Full 2π phase modulation using exciton-polaritons in a two-dimensional superlattice

Lynch, J., Kumar, P., Chen, C., Trainor, N., Kumari, S., Peng, T. Y., Chen, C. Y., Lu, Y. J., Redwing, J. & Jariwala, D., Jan 17 2025, In: Device. 3, 1, 100639.

Research output: Contribution to journalArticlepeer-review

Cross-Modal Characterization of Thin-Film MoS2 Using Generative Models

Moses, I. A., Chen, C., Redwing, J. M. & Reinhart, W. F., 2025, (Accepted/In press) In: Advanced Intelligent Systems.

Research output: Contribution to journalArticlepeer-review

Nanosheets Derived from Titanium Diboride as Gate Insulators for Atomically Thin Transistors

Rasyotra, A., Das, M., Sen, D., Zhang, Z., Pannone, A., Chen, C., Redwing, J. M., Yang, Y., Jasuja, K. & Das, S., Jun 3 2025, In: ACS nano. 19, 21, p. 19646-19658 13 p.

Research output: Contribution to journalArticlepeer-review

Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors

Sadaf, M. U. K., Chen, Z., Subbulakshmi Radhakrishnan, S., Sun, Y., Ding, L., Graves, A. R., Yang, Y., Redwing, J. M. & Das, S., Dec 2025, In: Nature communications. 16, 1, 4879.

Research output: Contribution to journalArticlepeer-review

Large-scale crossbar arrays based on three-terminal MoS2 memtransistors

Schranghamer, T. F., Pannone, A., Kumar, J. M., Thiyyadi Baiju, D. K., Chen, C., McKnight, T., Tadekawa, S., Haines, E., Ordonez, R., Hayashi, C., Redwing, J. M. & Das, S., Dec 2025, In: Nature communications. 16, 1, 9518.

Research output: Contribution to journalArticlepeer-review

High Current and Carrier Densities in 2D MoS2/AlScN Field-Effect Transistors via Ferroelectric Gating and Ohmic Contacts

Song, S., Kim, K. H., Keneipp, R., Jung, M., Trainor, N., Chen, C., Zheng, J., Redwing, J. M., Kang, J., Drndić, M., Olsson, R. H. & Jariwala, D., Mar 11 2025, In: ACS nano. 19, 9, p. 8985-8996 12 p.

Research output: Contribution to journalArticlepeer-review